j c/ , o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon npn rf transistor MMBR941L description ? low noise ? high current-gain bandwidth product applications ? designed for use in high gain , low noise small-signal amplifiers. absolute maximum ratings(ta=25v ) symbol vcbo vceo vebo ic pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector power dissipation @tc= 75-c junction temperature storage temperature range value 20 10 1.5 50 0.25 150 -55-150 unit v v v ma w 'c r ^_ sot- 2 3 package -iii i marking us ldlj. / \ r-j l_ dim a b c d j. k k l 11 ri 3 c rm ^j k- 1 : base 2: emitter 3: collector l l mm win 0.37 1. 19 2. 10 o.s9 1. 73 2.65 1. 10 0. 15 0.076 max 0.51 1, 10 2.50 1.05 2.05 3. 05 1.30 0.61 0. its m nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to he both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon npn rf transistor MMBR941L electrical characteristics tc=25"c unless otherwise specified symbol v(br)ceo v(br)cbo iebo icbo hfe cob fi i s21e i 2 i s21e i 2 gu max gu max nf parameter collector-emitter breakdown voltage collector-base breakdown voltage emitter cutoff current collector cutoff current dc current gain output capacitance current-gain ? bandwidth product insertion power gain insertion power gain maximum unilateral gain maximum unilateral gain noise figure conditions lc= 0.1ma; ib= 0 lc= 0.1ma; ie= 0 veb= 1v; lc= 0 vgb=10v;ie=0 lc= 5ma ; vce= 6v le=0;vcb=10v;f=1mhz lc=15ma;vce=6v;f=1ghz lc= 15ma ; vce= 6v;f= 1 .oghz lc= 15ma ; vce= 6v;f= 2.0gh2 lc= 15ma ; vce= 6v;f= 1 .oghz lc= 15ma ; vce= 6v;f= 2.0ghz lc=5ma;vce=6v;f=1ghz; rg= 50 n min 10 20 50 typ. 0.35 8 14 8.0 16 10 1.9 max 0.1 0.1 200 2.8 unit v v ua ua pf ghz db db db db db
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